Thin film transistor and manufacturing method thereof, and electronic device
US11844227B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 3, 2020 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Apr 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
Abstract
A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.