Method to improve magnetic tunnel junction memory cells by treating native oxide
US11844283B2 · kind B2 · utility
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Key dates
| Filing date | Apr 26, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Jun 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.
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