Barrier-less structures
US11848190B2 · kind B2 · utility
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11References
19Claims
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Assignee
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Key dates
| Filing date | Nov 10, 2022 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Nov 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.