Manufacturing method for thermal conductive layer, manufacturing method for laminate, and manufacturing method for semiconductor device
US11848249B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2022 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Apr 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06589
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a manufacturing method for a thermal conductive layer, with which a thermal conductive layer having a thermal diffusivity of 3.0×10−7 m2s−1 or more is manufactured on a support by using a composition for forming a thermal conductive layer, the composition containing a resin, a filler, and a solvent and having a concentration of solid contents of less than 90% by mass, the manufacturing method including a discharge step of discharging the composition toward the support; and a solvent amount reduction step of reducing a solvent amount in the composition such that a first solvent amount reduction time taken after the composition is discharged until the concentration of solid contents in the composition reaches 90% by mass on the support is 10 seconds or more for each position on the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.