Method of manufacturing an electromagnetic interference shielding layer

US11848276B2 · kind B2 · utility

Assignee

• HERAEUS ELECTRONICS GMBH & CO. KG · DE

Inventors

• Christian Neumann · Hungen, DE
• Kai-Ulrich Boldt · Hanau, DE
• Muriel Thomas · Dietzenbach, DE
• Susanne Behl · Hanau, DE
• Peter K. Kramer · Mexico City, MX
• Holger Ulland · Willich, DE

Key dates

• Filing date: Nov 4, 2019
• Grant date: Dec 19, 2023
• Expiry date: Dec 15, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3025
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A method of manufacturing a semiconductor package which is at least in part covered by an electromagnetic interference shielding layer. The method includes at least these steps: i. providing the semiconductor package and an ink composition having at least a compound comprising at least one metal precursor and at least one organic compound; ii. applying at least a part of the ink composition onto the semiconductor package, wherein a precursor layer is formed; and iii. treating the precursor layer with an irradiation of a peak wavelength in the range from 100 nm to 1 mm. Further disclosed is a semiconductor package comprising an electromagnetic interference shielding layer comprising at least one metal, wherein the semiconductor package is obtainable by the aforementioned method. Still further disclosed are a semiconductor package comprising an electromagnetic interference shielding layer having a specific conductance and thickness, and uses of an ink composition.