Image sensor
US11848338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Nov 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.