Semiconductor structure including isolation structure and method for forming isolation structure
US11848339B2 · kind B2 · utility
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7References
20Claims
0Family size
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Key dates
| Filing date | Mar 19, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Nov 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor substrate, an image sensor, and an isolation structure. The isolation structure is adjacent to the image sensor and disposed in the semiconductor substrate. The isolation structure includes a first oxide layer, a second oxide layer over the first oxide layer, and a charge-trapping layer disposed between the first oxide layer and the second oxide layer. The charge-trapping layer includes a material different from those of the first oxide layer and the second oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.