Semiconductor device and method of manufacturing the same
US11848346B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 29, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Nov 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.