Silicon carbide semiconductor device and method of manufacturing same
US11848358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2018 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Nov 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A drift layer is made of silicon carbide and has a first conductivity type. At least one trench has a first side surface facing a Schottky barrier diode region, and a second side surface extending in a transistor region and contacting a source region, a body region, and the drift layer. A first protective region is provided under the at least one trench, has a second conductivity type, and is higher in impurity concentration of the second conductivity type than the body region. A second protective region extends from the first protective region, reaches at least one of the first side surface and an end region of the second side surface continuous with the first side surface, has an uppermost portion shallower than a lowermost portion of the body region, and is higher in impurity concentration of the second conductivity type than the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.