High electron mobility transistor
US11848376B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2023 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Jun 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
Abstract
A high electron mobility transistor (HEMT) includes a GaN epi-layer, a first passivation layer, a source electrode metal, a drain electrode metal, a gate electrode metal, and a field plate. The first passivation layer is deposited on the GaN epi-layer. The source electrode metal, the drain electrode metal, and the gate electrode are recessed into the first passivation layer and deposited on the GaN epi-layer. The source electrode metal has a source field plate with a source field plate length Lsf. The drain electrode metal has a drain field plate with a drain field plate length Ldf, wherein Ldf>Lsf. The gate electrode is situated between the source electrode metal and the drain electrode metal. The field plate is situated between the gate electrode and the drain electrode metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.