Semiconductor component and manufacturing method thereof
US11848380B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 25, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Jun 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.