Tuning emission wavelengths of quantum emitters via a phase change material
US11848400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Nov 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.