Narrow linewidth semiconductor laser device
US11848539B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 6, 2022 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Feb 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A novel narrow linewidth laser device is disclosed that includes a gain element, such as a quantum well, quantum dot or bulk waveguide laser chip and a fiber Bragg grating formed in an optical fiber positioned to receive the output from a first end of the gain element and return a portion of said output back into the gain element. The fiber Bragg grating is constructed so that its power reflectivity profile has a ratio of reflectivity slope over reflectivity at the 3 dB point below the reflectivity peak on the red side (longer wavelength side) of the grating larger than a value of 2/nm. The operating wavelength of the device may be tuned thermally, electrically, or thermo-electrically to be on the red side of the fiber Bragg grating reflectivity profile, preferably, but not necessarily, at the 3 dB point below the reflectivity peak or lower. In another embodiment, a second grating is optically coupled to a second end of the gain element and has a reflectivity profile that overlaps at least a portion of the reflectivity profile of the front end fiber Bragg grating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.