Apparatus and method for growing high-purity semi-insulating silicon carbide crystal
US11851784B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2019 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | May 30, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high-purity semi-insulating silicon carbide crystal growing apparatus and a method therefor are provided, the apparatus comprising a growth crucible, a bottom part of the growth crucible having inserted a gas pipe, a top part of the growth crucible being provided with a growth crucible cover, a feedstock crucible having a bowl-shaped structure being disposed in the growth crucible, an upper part of the feedstock crucible being provided with a baffle, a bottom part of the feedstock crucible being provided with a ring-shaped supporting feedstock crucible bottom foot, the diameter of the feedstock crucible bottom foot being ⅛ the diameter of the feedstock crucible, and the feedstock crucible bottom foot having disposed thereon 8-36 evenly distributed gas holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.