Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device
US11851785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Jan 29, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.