STT-SOT hybrid magnetoresistive element and manufacture thereof
US11854589B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Oct 24, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | May 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the SOT material layer that exhibits the Spin Hall Effect, which is opposite to a surface of the SOT material layer where the magnetic recording layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the SOT material layer and the magnetic recording layer to achieve a spin-orbit torque and a higher spin-polarization degree for an applied electric current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.