Semiconductor device
US11855135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Apr 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the disclosure is to provide a semiconductor device having enhanced adhesion of the electrode while improving the reverse direction breakdown voltage, which is especially useful for power devices. A semiconductor device including a semiconductor layer and an electrode layer provided on the semiconductor layer and including at least a first electrode layer and a second electrode layer provided on the first electrode layer, wherein an outer edge portion of the second electrode layer is located outside an outer edge portion of the first electrode layer, wherein the semiconductor layer includes an electric field relaxation region with a different electrical resistivity from that of the semiconductor layer, and wherein the electric field relaxation region overlaps at least a part of a portion of the second electrode layer located outside the outer edge portion of the first electrode layer in plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.