Semiconductor device and forming method thereof
US11855171B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 12, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Aug 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.