High Electron Mobility Transistor (HEMT) with a back barrier layer
US11855199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2020 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | May 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.