Patent · US Active

Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode

US11855413B2 · kind B2 · utility

1Cited by
17References
20Claims
0Family size

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Key dates

Filing dateDec 28, 2020
Grant dateDec 26, 2023
Priority date
Expiry dateSep 29, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.