High bandwidth optical modulator
US11855700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Dec 27, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/2257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ≤4 Ohms. The interface resistance is a serial resistance between the interface layer and respective electrodes of the pluralities of segmented capacitive loading electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.