Patent · US Active

Ferroeolectric memories with ferroelectric composite layer

US11856789B2 · kind B2 · utility

0Cited by

5References

17Claims

0Family size

Assignee

Industrial Technology Research Institute · TW

Inventors

Yu-De Lin · Taoyuan, TW
Po-Chun Yeh · Sunnyvale, US
Pei-Jer Tzeng · Taipei, TW

Key dates

Filing date	Jul 6, 2021
Grant date	Dec 26, 2023
Priority date	—
Expiry date	Jul 21, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/684
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer. The ferroelectric composite layer includes a first electrode layer, a second electrode layer, a ferroelectric layer and an antiferroelectric layer. The first electrode layer is opposite to the second electrode layer, and the ferroelectric layer and the antiferroelectric layer are disposed between the first electrode layer and the second electrode layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.