Variable resistance memory device and method of manufacturing the same
US11856872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2021 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Aug 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A variable resistance memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction and crossing the first conductive lines in a plan view, and cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view. Each of the cell structures includes a switching pattern, a variable resistance pattern, and a first electrode provided between the switching pattern and the first conductive line, the first electrode including carbon. Each of the first conductive lines includes an upper pattern including a metal nitride in an upper portion thereof. The upper pattern is in contact with a bottom surface of the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.