Electronic device, over-erase detection and elimination methods for memory cells
US11862259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2022 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Aug 30, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device, and an over-erase detection and elimination method for memory cells are provided; the method includes: performing an erase operation on a specified area; selecting all the memory cells in the selected area one by one; measuring a threshold voltage of a selected memory cell for over-erase detection to see if it is less than a normal erase threshold voltage; if not, selecting the next memory cell for over-erase detection, and if yes, then performing a soft-write operation on the selected memory cell; after the soft-write operation, performing over-erase detection again to see whether the threshold voltage of the selected memory cell is within a normal threshold range; and if not, performing a soft-write operation again, and if yes, the next memory cell is selected for over-erase detection, until the threshold voltages of all the memory cells selected for erasure are within the normal threshold range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.