Semiconductor device
US11862671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2022 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Oct 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/107
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a body region of the first conductivity type, a source region of a second conductivity type, a drain region of the second conductivity type, a gate electrode, a drift region of the second conductivity type, an implanted oxide layer, and a semiconductor region of the first conductivity type. The semiconductor region is formed to extend in a direction along the top face of the semiconductor substrate. A first distance and a second distance are set so that an intensity of 0.35 MV/cm or less is observed in an electric field of a first region including the end portion of the drift region and in an electric field of a second region between the end of the semiconductor region and the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.