Ultra-thin fin structure and method of fabricating the same
US11862683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Nov 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method for forming ultra-thin fins with a tapered bottom profile for improved structural rigidity and gate control characteristics. The method includes forming a fin structure that includes an epitaxial layer portion and a doped region portion surrounded by an isolation region so that a top section of the epitaxial layer portion is above the isolation region. The method also includes depositing a silicon-based layer on the top portion of the epitaxial layer above the isolation region and annealing the silicon-based layer to reflow the silicon-based layer. The method further includes etching the silicon-based layer and the fin structure above the isolation region to form a first bottom tapered profile in the fin structure above the isolation region and annealing the fin structure to form a second bottom tapered profile below the first bottom tapered profile and above the isolation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.