Opto-electronic device and image sensor including the same
US11862743B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Aug 27, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Aug 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F10/16
Abstract
An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.