Light-emitting diode and method for manufacturing the same

US11862753B2 · kind B2 · utility

Assignee

• Anhui Sanan Optoelectronics Co., Ltd. · CN

Inventors

• Yung-Ling Lan · Wuhu, CN
• Chenghung LEE · Wuhu, CN
• Chan-Chan Ling · Wuhu, CN
• Chia-Hao Chang · Hsinchu, TW

Key dates

• Filing date: Mar 25, 2021
• Grant date: Jan 2, 2024
• Expiry date: Mar 11, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A light-emitting diode includes a first type semiconductor layer, a stress relief layer disposed on the first type semiconductor layer and including at least one first repeating unit containing a first well layer and a first barrier layer that are alternately stacked, an active layer disposed on the stress relief layer and including at least one second repeating unit containing a second well layer and a second barrier layer that are alternately stacked, a second type semiconductor layer disposed on the active layer, a first electrode electrically connected to the first type semiconductor layer, and a second electrode electrically connected to the second type semiconductor layer. The first well layer is made of an In-containing material. The second well layer is made of an In-containing material. The second barrier layer is formed with multiple sub-layers, each of which is made of an Al-containing material.