Power amplifier circuit
US11863128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2021 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Jun 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor that supplies a bias current based on a first current which is a part of a control current to the first transistor; a current output element in which a current flowing therethrough increases in accordance with a rise in temperature; and a wiring portion including a plurality of metal layers that are electrically connected to an emitter of the first transistor and that are stacked one on top of another so as to oppose the semiconductor substrate. At least one metal layer among the plurality of metal layers extends so as to overlap an area extending from at least a part of a first disposition area in which the first transistor is disposed to a second disposition area in which the current output element is disposed in plan view of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.