CMOS image sensor, image sensor unit and signal transmission methods therefor
US11863899B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | Oct 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The disclosure discloses a CMOS image sensor, which includes a plurality of image sensor units and a resistance-to-digital converting unit. Each image sensor unit includes a pixel unit and a resistive random access memory unit connected to the pixel unit, the pixel unit is configured to convert a received optical signal into an analog signal and the resistive random access memory unit is configured to convert the analog electrical signal into a resistance value. The resistance-to-digital converting unit is connected to the plurality of the image sensor units, and is configured to convert the resistance value into a digital signal. The resistive random access memory unit is adopted in the present disclosure to replace a transistor device and is configured to convert resistance information of the resistive random access memory unit into a digital signal and output. Thus, digital quantization of image information is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.