Patent · US Active

Integration of semiconductor membranes with piezoelectric substrates

US11864465B2 · kind B2 · utility

0Cited by
1References
13Claims
0Family size

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Key dates

Filing dateMay 22, 2020
Grant dateJan 2, 2024
Priority date
Expiry dateAug 5, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N33/48721
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.