Method of manufacturing an integrated capacitor structure using a donor substrate for transferring layers to a receiver substrate
US11865580B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Jun 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/878
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for producing an at least partially transparent device is provided, including producing, on a first substrate, first and second separation layers one against the other; producing, on the second separation layer, an at least partially transparent functional layer; making the functional layer integral with a second at least partially transparent substrate; forming a mechanical separation at an interface between the separation layers; removing the second separation layer; producing a first at least partially transparent electrode layer on the functional layer; where the materials of the stack are chosen such that the interface between the separation layers corresponds to that, among all the interfaces of the stack, having the lowest adherence force.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.