Cesium-niobium-chalcogenide compounds and semiconductor devices including the same
US11866344B2 · kind B2 · utility
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Key dates
| Filing date | Feb 5, 2019 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | May 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02568
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.