Ligand modified quantum dot material and patterning thereof, and quantum dot material for light emitting and display devices
US11866628B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 12, 2021 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Apr 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/125
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed are a quantum dot material, a method for patterning a quantum dot film and a quantum dot light emitting device. when preparing a patterned quantum dot film, firstly, a quantum dot film is made by using the quantum dot material with the photolysis group, and a corresponding region of the quantum dot film is irradiated with ultraviolet light under the shielding of a mask template, so that the photolysis group in the corresponding region is photolyzed into the polarity change group, thereby changing the solubility of the quantum dot material in the corresponding region; and subsequently, the quantum dot film is cleaned by using a solvent which can dissolve the quantum dot material with the photolysis group, the quantum dot material in non-irradiated regions is dissolved and removed, and the quantum dot material in the corresponding region is retained to form a pattern of the quantum dot film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.