Patent · US Active

Method and system for liquid encapsulated growth of cadmium zinc telluride crystals

US11866848B1 · kind B1 · utility

0Cited by

0References

16Claims

0Family size

Assignee

DRS Network & Imaging Systems, LLC · US

Inventors

Lance Robertson · Rockwall, US
Luigi Colombo · Dallas, US
Victor Perez-Rubio · Plano, US
Tim Svoboda · Grand Prairie, US
Fred Harris · Duncanville, US
Kathryn M. O'Brien · South Salem, US

Key dates

Filing date	Jun 18, 2020
Grant date	Jan 9, 2024
Priority date	—
Expiry date	Mar 11, 2042

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B35/00
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of growing a cadmium zinc telluride (CdZnTe) crystal includes providing a crucible including a solid CdZnTe source and forming a Te-rich Cd—Zn—Te melt on the solid CdZnTe source. The method also includes positioning a CdZnTe seed crystal in physical contact with the Te-rich Cd—Zn—Te melt and growing the CdZnTe crystal from the Te-rich Cd—Zn—Te melt.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.