Patent · US Active

Method for reading and writing and memory device

US11869615B2 · kind B2 · utility

0Cited by
6References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 30, 2021
Grant dateJan 9, 2024
Priority date
Expiry dateApr 12, 2042

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02D10/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The embodiments provide a method for reading and writing and a memory device. The method for reading and writing includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and associating the address information pointed to by the read command with a spare memory cell if an error occurs in the data to be read out. The method for reading and writing provided by the present disclosure greatly improves reliability of the memory device and prolongs lifespan of the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.