Thin film transistor and manufacturing method therefor, array substrate, and display device

US11869976B2 · kind B2 · utility

Assignees

• Ordos Yuansheng Optoelectronics Co., Ltd. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Lei Yan · Beijing, CN
• Jun Fan · Beijing, CN
• Yezhou Fang · Beijing, CN
• Feng Li · Beijing, CN
• Wei Li · Beijing, CN
• Lei Li · Zhengzhou, CN
• Yusheng Liu · Lund, SE
• Yanyan MENG · Beijing, CN

Key dates

• Filing date: Aug 25, 2020
• Grant date: Jan 9, 2024
• Expiry date: Jul 23, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A thin film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin film transistor includes an active layer, a gate insulating layer, and a gate electrode; the gate insulating layer is located on one side of the active layer; the gate electrode is located on one side of the gate insulating layer distant from the active layer; the gate electrode includes an opening a part of the active layer overlapped with the opening includes a first lightly doped region, a first heavily doped region, and a second lightly doped region that are sequentially arranged along a first direction parallel to a plane where the active layer is located.