Light-emitting diode and method of manufacturing the same, and display device
US11870011B2 · kind B2 · utility
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2References
17Claims
0Family size
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Key dates
| Filing date | Jun 25, 2019 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Sep 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.