Laser diode and method for manufacturing the same
US11870219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2021 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Jan 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.