Microelectronics device and method for producing a microelectronics device

US11870369B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Jochen Tomaschko · Herrenberg, DE
• Christoph Kaiser · Oberriedl, AT
• Timo Schary · Grötzingen, DE
• Daniel Monteiro Diniz Reis · Esslingen am Neckar, DE

Key dates

• Filing date: Apr 14, 2021
• Grant date: Jan 9, 2024
• Expiry date: Mar 2, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/87
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A microelectronics device, in particular a thin-film electronics device, having at least one bearer substrate and having at least one pyramidally layered, piezo stack situated on the bearer substrate, which stack has at least one piezo element and at least one electrode, in particular a floor electrode, and having at least one contact opening situated on the at least one electrode. The microelectronics device has a diffusion blocking element that is situated on the at least one electrode at least partly at a distance from the piezo element, and/or the contact opening forms a contact surface that is at most as large as one one-thousandth of a surface of the at least one piezo element, and/or a length of an electrical path from the at least one contact opening to the at least one piezo element corresponds to at least twice the circumference of the at least one contact opening.