Organic field-effect transistor comprising a dielectric layer exhibiting high dielectric permittivity and being stable with temperature
US11871650B2 · kind B2 · utility
1Cited by
3References
15Claims
0Family size
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Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Jul 18, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The invention relates to a composition comprising a blend of fluorinated electroactive polymers and having a dielectric permittivity that exhibits greater stability over the operating temperature range with respect to each polymer employed on its own. The invention also relates to formulations and films produced on the basis of said composition. The invention also relates to a field-effect transistor, at least part of the dielectric layer of which is composed of a blend of fluorinated electroactive polymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.