Polycrystalline chemical vapour deposition synthetic diamond material
US11873224B2 · kind B2 · utility
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Key dates
| Filing date | May 14, 2019 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Dec 20, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/90
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm−1K−1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.