Quantum dot and method for producing the same
US11873436B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Sep 28, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/64
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A quantum dot of the present invention is a nanocrystal represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.