Monolithically integrated optical analog-to-digital conversion system based on lithium niobate-silicon wafer and method for manufacturing the same
US11874582B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2021 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Apr 8, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithically integrated optical analog-to-digital conversion system based on a lithium niobate-silicon wafer, and a method for manufacturing the same, wherein a novel wafer (lithium niobate-silicon wafer) is used to implement the monolithically integrated optical analog-to-digital conversion system having multiple photonic devices, including an electro-optical modulator array, a tunable delay line array, an electronic circuit, and the like. As a result, multiple devices are manufactured on one chip, and the performance advantages and the stability of the system are guaranteed. Moreover, the present invention provides a CMOS-compatible method for manufacturing the system, so that the monolithically integrated optical analog-to-digital conversion system based on the lithium niobate-silicon wafer can be implemented on platforms of most chip manufacturers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.