Ion trap apparatus with integrated switching apparatus
US11876092B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2021 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Apr 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/356017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion trap apparatus (e.g., ion trap chip) having a plurality of electrodes is provided. The ion trap apparatus may comprise a plurality of interconnect layers, a substrate, and at least one integrated switching network layer disposed between the plurality of interconnect layers and the substrate. The integrated switching network layer may comprise a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes. An example ion trap apparatus may comprise a surface ion trap chip. The ion trap apparatus may be configured to operate within a cryogenic chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.