Displays with silicon and semiconducting oxide thin-film transistors
US11876099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2023 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Jan 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.