PN junction and preparation method and use thereof
US11876142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2020 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Dec 28, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1-x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.