Photosensitive semiconductor component, method for forming a photosensitive semiconductor component

US11876144B2 · kind B2 · utility

Assignee

• VISHAY SEMICONDUCTOR GMBH · DE

Inventor

• Manuel Schmidt · Dortmund, DE

Key dates

• Filing date: Mar 28, 2019
• Grant date: Jan 16, 2024
• Expiry date: Oct 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.