Combination of strain management layers for light emitting elements
US11876150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2021 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Jan 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
Abstract
The disclosure describes various aspects of strain management layers for light emitting elements such as light-emitting diodes (LEDs). The present disclosure describes an LED structure formed on a substrate and having a strain management region supported on the substrate, and an active region configured to provide a light emission associated with the LED structure. The strain management region includes a first layer including a superlattice having a plurality of repeated first and second sublayers, and a second layer including a bulk layer. In an embodiment, at least one of the first and second sublayers and the bulk layer includes a composition of InxAlyGa1-x-yN. A device having multiple LED structures and a method of making the LED structure are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.