Light emitting diode device and method for manufacturing the same

US11876154B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Mingyang Li · Chengdu, CN
• Guanzhou LIU · Tianjin, CN
• Jingfeng Bi · Tianjin, CN
• Senlin Li · 红钢城街道, CN
• Minghui Song · Tianjin, CN
• Wenjun Chen · Foshan, CN

Key dates

• Filing date: Feb 20, 2020
• Grant date: Jan 16, 2024
• Expiry date: Nov 14, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364

Abstract

A light-emitting diode (LED) device includes a first epitaxial layered structure having an upper surface having different first and second regions, a second epitaxial layered structure spaced-apart disposed on the first epitaxial layered structure, a light conversion layer formed on the first region, a bonding unit disposed on the light conversion layer, the bonding unit and the light conversion layer interconnecting the first and second epitaxial layered structures, and an electrically conductive structure formed on the second region and electrically connects the first and second epitaxial layered structures. A method for manufacturing the LED device is also disclosed.